| Component |
Type |
Excerpt from Data Sheet |
Download |
| ILC6390/91 |
semiconductor diode |
54) SD: Diode (Schottky diode; MATSUSHITA MA 735) C L :16V 47µF (Tantalum Capacitor; NICHICON, f93) Figures 3 &4 L: 47µH (SUMIDA, CD-54) SD: Diode (Schottky diode |
 |
| ILC6380/81 |
semiconductor diode |
5 (TOP VIEW) 1 3 2 V OUT CE EXT 4 5 V SS N/C ILC6380 ILC6381 Page 3 ILC6380/81 3 ©2001 Fairchild Semiconductor Corporation Notes: 1. The Schottky diode (S.D. in figure |
 |
| FDH700 Ultra Fast Diode |
semiconductor diode |
BAND Page 3 DISCRETE POWER AND SIGNAL TECHNOLOGIES FD700 Ultra Fast Diode Diode ©1997 Fairchild SemiconductorULTRA FAST DIODE ©1999 Fairchild Semiconductor |
 |
| NUP2301MW6T1 Low Capacitance Diode Array for ESD Protection in Two Data Lin.. |
semiconductor diode |
Semiconductor Components Industries, LLC, 2003 May, 2003 -Rev. 1 1 Publication Order Number: NUP2301MW6T1/D NUP2301MW6T1 Low Capacitance Diode Array for ESD Protection |
 |
| OD9601N /02N /04N Fam DS |
semiconductor diode |
1 11 Oki Semiconductor OD9604N Photo DiodeOptions (contact Oki Semiconductor) Page 3 –s OD9604N Photo Diode Preamp Module s 13 Oki Semiconductor |
 |
| OD9601N /02N /04N Fam DS |
semiconductor diode |
1 7 Oki Semiconductor OD9602N Photo DiodeOptions (contact Oki Semiconductor) Page 3 –s OD9602N Photo Diode Preamp Module s 9 Oki Semiconductor |
 |
| OD9601N /02N /04N Fam DS |
semiconductor diode |
1 3 Oki Semiconductor OD9601N Photo DiodeOptions (contact Oki Semiconductor) Page 3 –s OD9601N Photo Diode Preamp Module s 5 Oki Semiconductor |
 |
| 2SD1922 |
semiconductor diode |
Diode Forward Voltage V ECF (V) 1.0 0.8 0.6 0.4 0.2 0 Diode Current I D (A) Typical Characteristics of Emitter to Collector Diode Ta =25 °C Pulse Page 5 2SD1922 5 3 0.3 10 |
 |
| 2SD1974 |
semiconductor diode |
semiconductor products. Hitachi, Ltd. Semiconductor &Integrated Circuits. Nippon BldgSafe Operation of Emitter to Collector Diode Pulse Width P W (ms) Diode Current |
 |
| RURG30100CC 30A, 1000V Ultrafast Dual Diode |
semiconductor diode |
Diode Page 1 ©2001 Fairchild Semiconductor3 RURG30100CC 30A, 1000V Ultrafast Dual Diode The RURG30100CC is an ultrafast dual diode with soft recovery |
 |
| ISL9R2480G2 24A, 800V Stealth Diode |
semiconductor diode |
Diode Page 1 ©2001 Fairchild SemiconductorPFC Boost Diode •UPS Free Wheeling Diode •Motor Drive FWD •SMPS FWD •Snubber Diode Packaging JEDEC STYLE |
 |
| MMBD914LT1 High-Speed Switching Diode |
semiconductor diode |
MMBD914LT1 http:onsemi.com 4 ON Semiconductor and are registered trademarks of Semiconductor ComponentsDiode Page 1 ©Semiconductor Components |
 |
| FJH1102 Ultra Low Leakage Diode |
semiconductor diode |
Diode Page 1 FJH1102 ©1999 Fairchild Semiconductor Corporation FJH1102 -Rev. A General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is |
 |
| FJH1101 Ultra Low Leakage Diode |
semiconductor diode |
Diode Page 1 FJH1101 ©1999 Fairchild Semiconductor Corporation FJH1101 -Rev. A General Description: An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is |
 |
| FYPF2004DN Schottky Barrier Rectifier |
semiconductor diode |
diode) Figure 4. Thermal Impedance Characteristics (per diode) Figure 6. Non-Repetive Sureg Current (per diode) 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 T J =125 o C T J =75 o C |
 |
| BAV103 High Voltage General Purpose Diode |
semiconductor diode |
F =I R 30 mA I RR =1.0 mA R L =100 Ohms High Voltage, General Purpose Diode ©1997 Fairchild Semiconductor Corporation General Description: A General Purpose diode that |
 |
| FDLL3595 High Conductance Low Leadage Diode |
semiconductor diode |
Diode Expansion Gap ©2000 Fairchild Semiconductor Corporation Page 2 LL-34 JEDEC (AC VERSION) Fairchild SemiconductorFDLL3595 High Conductance Low Leadage Diode |
 |
| BAV102 High Voltage General Purpose Diode |
semiconductor diode |
F =I R 30 mA I RR =1.0 mA R L =100 Ohms High Voltage, General Purpose Diode ©1997 Fairchild Semiconductor Corporation General Description: A General Purpose diode that |
 |
| FLLD261 High Conductance Low Leakage Diode |
semiconductor diode |
per unit (gram) 0.0082 ©2000 Fairchild Semiconductor International Page 8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns |
 |
| 1S923 High Voltage General Purpose Diode |
semiconductor diode |
200 V, T A =150 O C V F Forward Voltage 1.2 V I F =200 mA High Voltage General Purpose Diode ©1999 Fairchild Semiconductor Corporation 1S923 -Rev. A CATHODE BAND 0 |
 |