| Component |
Type |
Excerpt from Data Sheet |
Download |
| BFP620 |
germanium transistor |
2001 1 NPN Silicon Germanium RF Transistor •High gain low noise RF transistor •Provides outstanding performance for a wide range of wireless applications •Ideal |
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| BFP 620 |
germanium transistor |
Mar-01-2001 1 NPN Silicon Germanium RF Transistor •High gain low noise RF transistor •Provides outstanding performance for a wide range of wireless applications •Ideal |
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| IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor |
germanium transistor |
Germanium (SiGe) NPN transistor designedLow Noise Transistor Page 1 IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor sgrf0100.06 04/27 |
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| IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor |
germanium transistor |
CE =2.5V, I C =10mA •Package: SOT353 Description The IBM43RF0100 is a Silicon-Germanium (SiGe) NPN transistor designed for high performance, low cost applications |
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| BFP 620 |
germanium transistor |
Dec-22-2000 1 NPN Silicon Germanium RF Transistor •High gain low noise RF transistor •Provides outstanding performance for a wide range of wireless applications •Ideal |
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| BFP640 |
germanium transistor |
2004 1 NPN Silicon Germanium RF Transistor •High gain low noise RF transistor •Provides outstanding performance for a wide range of wireless applications •Ideal |
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| BFP640 |
germanium transistor |
2004 1 NPN Silicon Germanium RF Transistor •High gain low noise RF transistor •Provides outstanding performance for a wide range of wireless applications •Ideal |
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| BFP640F |
germanium transistor |
2004 1 NPN Silicon Germanium RF Transistor* High gain low noise RF transistor •Provides outstanding performance for a wide range of wireless applications •Ideal |
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| SGA-3563 |
germanium transistor |
2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with F T up to 50 GHz. This circuit uses |
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| SGA-7489 |
germanium transistor |
DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with F T up to 50 GHz. This circuit uses |
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| SGA-5263 |
germanium transistor |
4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with F T up to 50 GHz. This circuit uses |
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| SGA-0363 |
germanium transistor |
5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with F T up to 50 GHz. This circuit uses |
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| SGA-0163 |
germanium transistor |
1V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with F T up to 50 GHz. This circuit uses |
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| SGA-9289 Datasheet Rev_D.p65 |
germanium transistor |
GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9289 is cost |
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| SGA-9189 Datasheet Rev_B.p65 |
germanium transistor |
2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost |
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| BFP650 |
germanium transistor |
2004 1 NPN Silicon Germanium RF Transistor Preliminary data •For high power amplifiers •Ideal for low phase noise oscilators •Maxim. available Gain G ma =21 dB at |
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| BFP650 |
germanium transistor |
2004 1 NPN Silicon Germanium RF Transistor Preliminary data •For high power amplifiers •Ideal for low phase noise oscilators •Maxim. available Gain G ma =21 dB at |
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| SGA-4486 |
germanium transistor |
2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with F T up to 65 GHz. This circuit uses |
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| BFP620F |
germanium transistor |
Germanium RF Transistor Preliminary data For high gain low noise amplifiers Smallest Package 1.4 x 0.8 x 0.59mm Noise figure F =0.65 dB at 1.8 GHz outstanding |
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| BFP620F |
germanium transistor |
BFP620F Page 1 BFP620F Oct-12-2004 1 NPN Silicon Germanium RF Transistor* High gain low noise RF transistor •Small package 1.4 x 0.8 x 0.59 mm •Outstanding noise figure |
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