| Component |
Type |
Excerpt from Data Sheet |
Download |
| PNP Bipolar Junction Transistor with a 10 k Base–Emitter Resistor |
bipolar junction transistor |
PNP Bipolar Junction Transistor with a 10 k Base–Emitter Resistor Page 1 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Product Preview General Purpose |
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| Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: M.. |
bipolar junction transistor |
Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S Page 1 _For more information, contact the Sales Department at Diodes Incorporated Tel (805) 446 |
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| S ee Upg ra d ed P r od u ct RF2 11 7 |
bipolar junction transistor |
Equipment The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has |
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| AT-31625 DS |
bipolar junction transistor |
silicon bipolar junction transistor housed in a miniature, MSOP-3 surface mountAT-31625 DS Page 1 4.8 V NPN Common Emitter Medium Power Output Transistor |
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| MMBT2131T1 General Purpose Transistors |
bipolar junction transistor |
Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (T |
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| General Purpose Transistors MMBT2131T1 MMBT2131T3 |
bipolar junction transistor |
Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (T C =25 °C unless |
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| SEMICONDUCTOR TECHNICAL DATA |
bipolar junction transistor |
SEMICONDUCTOR TECHNICAL DATA Page 1 1 Motorola Bipolar Power Transistor Device Data Silicon Power Transistors Thehandling ability of a transistor; average junction |
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| NPN Bipolar Power Transistor For Switching Power Supply Applications |
bipolar junction transistor |
Bipolar Power Transistor Device Data Designer's Data Sheet SWITCHMODE ™NPN Bipolar Power Transistora transistor: average junction temperature and second break- down |
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| SEMICONDUCTOR TECHNICAL DATA |
bipolar junction transistor |
Motorola Bipolar Power Transistor Device DataTransistor Device Data There are two limitations on the power handling ability of a transistor: average junction |
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| HIGH SPEED/VOLTAGE OP AMP |
bipolar junction transistor |
only by transistor junctionof any bipolar transistor output op-amp. 1. Wire Bond Current Carrying Capability 2. Transistor Junction Temperature 3. Secondary |
|
| RF2117 |
bipolar junction transistor |
Equipment The RF2117 is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has |
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| RF2117 |
bipolar junction transistor |
a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been designed for use as |
|
| BUD43D2 Bipolar NPN Transistor |
bipolar junction transistor |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor IntegratingResistance –Junction–to–Case R ? JC 5.0 °C/W Thermal Resistance –Junction–to–Ambient |
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| General Purpose Transistors MMBT2132T1 MMBT2132T3 |
bipolar junction transistor |
1 General Purpose Transistors NPN Bipolar Junction Transistor (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (T C =25 °C unless otherwise noted) Rating |
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| Chapter 15 |
bipolar junction transistor |
EL lamp is ±50V for HV8051 and ±70V for HV8053. The HV8051/HV8053 has two internal oscillators, a switching bipolar junction transistor (BJT) and a high-voltage EL lamp |
|
| SA57255-XX |
bipolar junction transistor |
during start up. The PWM control circuit is designed to drive an external low resistance NPN bipolar junction transistor (BJT) The DRIVE output provides typically 7 |
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| Complementary NPN-PNP Silicon Power Bipolar Transistor MJL3281A MJL1302A * * |
bipolar junction transistor |
Bipolar Transistor MJL3281A MJL1302A *Page 1 Complementary NPN-PNP Silicon Power Bipolar Transistorability of a transistor; average junction |
|
| RF2157 |
bipolar junction transistor |
manufactured on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V |
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| RF2157 |
bipolar junction transistor |
on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA and TDMA |
|
| RF2157 |
bipolar junction transistor |
on an advanced Gallium Arsenide Hetero- junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA and TDMA |
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